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Colossal magnetoresistance

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Through Manganese, Oxide and Magnetic field

This technology may find uses in disk read-and-write heads, allowing for increases in hard disk drive data density. However, so far it has not led to practical applications because it requires low temperatures and bulky equipment.

History

Initially discovered in mixed-valence perovskite manganites in the 1950s by G. H. Jonker and J. H. van Santen, a first theoretical description in terms of the double-exchange mechanism was given early on. In this model, the spin orientation of adjacent Mn moments is associated with kinetic exchange of eg-electrons. Consequently, alignment of the Mn spins by an external magnetic field causes higher conductivity. Relevant experimental work was done by Volger, Wollan and Koehler, and later on by Jirak et al. and Pollert et al.

However, the double exchange model did not adequately explain the high insulating-like resistivity above the transition temperature. In the 1990s, work by R. von Helmolt et al. and Jin et al. initiated a large number of further studies. Although there is still no complete understanding of the phenomenon, there is a variety of theoretical and experimental work providing a deeper understanding of the relevant effects.

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