Lably
Skip to content

Haynes–Shockley experiment

  • 2 min read
  • 2 chapters

Related on Lably

Through Semiconductor, Electric current and Electric field

In the experiment, a piece of semiconductor gets a pulse of holes, for example, as induced by voltage or a short laser pulse.

Equations

To see the effect, we consider a n-type semiconductor with the length d. We are interested in determining the mobility of the carriers, diffusion constant and relaxation time. In the following, we reduce the problem to one dimension.

The equations for electron and hole currents are:

je=+μnnE+Dn∂n∂x
jp=+μppE−Dp∂p∂x

where the js are the current densities of electrons (e) and holes (p), the μs the charge carrier mobilities, E is the electric field, n and p the number densities of charge carriers, the Ds are diffusion coefficients, and x is position. The first term of the equations is the drift current, and the second term is the diffusion current.

Sign in to keep reading

One more chapter is free with a Lably account.

More in Physics