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Dennard scaling

As transistors become smaller, their power density remains constant

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Through Semiconductor device, Transistor and Voltage

Statement

For long MOS transistors (i.e. one side is significantly longer than the other two), with constant electric field inside the MOS, Dennard scaling gives L∝S−1,W∝S−1,tox∝S−1,VDD∝S−1,VT∝S−1,NA∝S, where parameters are scaled by a factor of ⁠S⁠s2.

Explanation of symbols:

S: scaling factor – a factor by which all the device dimensions and voltages are scaled down
A: area of the transistor
W: width of the transistor channel
L: length of the transistor channel
Cox: oxide capacitance – the capacitance per unit area of the gate dielectric layer (the oxide layer)
εox: permittivity of the oxide layer – a measure of how well the oxide layer can store electrical energy
tox: thickness of the oxide layer
Cg: total capacitance of the gate electrode
Kn: transconductance – a measure of how much the drain current changes in response to a change in the gate voltage
μn: electron mobility in the channel – a measure of how easily electrons can move through the channel
Ion: saturation current – the maximum current that can flow through the transistor when it is turned on
VGT: gate overdrive voltage – the difference between the gate voltage and the threshold voltage
Ron: resistance of the transistor when it is turned on
VDD: supply voltage – the voltage that is applied to the transistor
tpd: intrinsic delay – the time it takes for the transistor to switch from on to off or vice versa
Pav: average power consumption – the average amount of power that the transistor consumes
f: operating frequency – the frequency at which the transistor is switching
PD: power density – power consumption per unit area

In fixed voltage scaling, the supply voltage VDD is held constant (at ~5 V) instead of scaling like ⁠VDD∝S−1⁠. This results in different scaling exponents. The clock frequency grows faster, at S2 instead of S1, but at the price of rapidly increasing power density ⁠PD∝S3⁠.

Fixed voltage scaling was the common scaling regime which ended around 2005 at the "power wall", when it was too difficult to keep the chip cool. Furthermore, at constant supply voltage, the field grows like ⁠S1⁠, and the off-current grows exponentially with the field, resulting in high static power consumption since the 90 nm node.

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