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G. N. Ramachandran

Indian physicist (1922–2001)

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Early life and education

Ramachandran was born on 8 October 1922, in Ernakulam, Kingdom of Cochin, to Tamil parents. He completed his BSc honours in Physics from St Joseph's College, Tiruchirappalli in 1939. He joined the Indian Institute of Science, Bangalore in 1942 in the Electrical Engineering Department. Quickly realising his interest in physics, he switched to the Department of Physics to complete his master's and doctoral thesis under the supervision of Nobel laureate C. V. Raman. In 1942, he received a master's degree in physics from Madras University with his thesis submitted from Bangalore (he did not attend any Madras college at that time). He subsequently received his D.Sc. degree in 1947. Here he mostly studied crystal physics and crystal optics. During his studies he created an X-ray focusing mirror for the X-ray microscope. The resulting field of crystal topography is used in studies involving crystal growth and solid-state reactivity.

Ramachandran then spent two years (1947–1949) at the Cavendish Laboratory in Cambridge, where he earned his PhD for 'studies on X-ray diffuse scattering and its application to determination of elastic constants' under the direction of William Alfred Wooster, a leading crystallography expert.

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