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Indium tin oxide

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Through Oxygen, Alloy and Electrical resistivity and conductivity

Indium tin oxide is one of the most widely used transparent conducting oxides, not just for its electrical conductivity and optical transparency, but also for the ease with which it can be deposited as a thin film, as well as its chemical resistance to moisture. As with all transparent conducting films, a compromise must be made between conductivity and transparency, since increasing the thickness and increasing the concentration of charge carriers increases the film's conductivity, but decreases its transparency.

Thin films of indium tin oxide are most commonly deposited on surfaces by physical vapor deposition. Often used is electron beam evaporation, or a range of sputter deposition techniques.

Material and properties

ITO is a mixed oxide of indium and tin with a melting point in the range 1526–1926 °C (1800–2200 K, 2800–3500 °F), depending on composition. The most commonly used material is an oxide of a composition of ca. In4Sn. The material is a n-type semiconductor with a large bandgap of around 4 eV. ITO is both transparent to visible light and relatively conductive. It has a low electrical resistivity of ~10−4 Ω·cm, and a thin film can have an optical transmittance of greater than 80%. These properties are utilized to great advantage in touch-screen applications such as mobile phones.

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