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Light-emitting diode physics

Practical physics application

  • 10 min read
  • 6 chapters

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Through Refractive index, P–n junction and Electronic band structure

Electroluminescence

The p–n junction in any direct band gap material emits light when electric current flows through it, that is, electroluminescence. Electrons cross from the n-region and recombine with the holes existing in the p-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus, the energy level of the holes is lower than the energy levels of the electrons. Some portion of the energy must be dissipated to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

As indirect band gap materials the electrons dissipate energy in the form of heat within the crystalline silicon and germanium diodes, but in gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) semiconductors, the electrons dissipate energy by emitting photons. If the semiconductor is translucent, the junction becomes the source of light, thus becoming a light-emitting diode.

The wavelength of the light emitted, and thus its color, depends on the band gap energy of the materials forming the p-n junction. In silicon or germanium diodes, the electrons and holes usually recombine by a non-radiative transition, which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light.

LED development began with infrared and red devices made with gallium arsenide. Advances in materials science have enabled making devices with ever-shorter wavelengths, emitting light in a variety of colors.

LEDs are usually built on an n-type substrate, with an electrode attached to the p-type layer deposited on its surface. P-type substrates, while less common, occur as well. Many commercial LEDs, especially GaN/InGaN, also use sapphire substrates.

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